808nm Diode Laser Infrarouge Couplées sur Fibre

808nm Diode Laser Infrarouge Couplées sur Fibre

808nm Infrared Laser Diode Module

808nm Module de Diode Laser Infrarouge

808nm Narrow Spectral Linewidth Laser Diode

Product name: 808nm, C-mount package
Laser Diode output power: 2000mW, 2500mW, 5500mW
Application: biomedical, Raman spectrum, military, sensing and optical isolation
Wavelength: 808±0.5nm

Regular Price 398,75 $US Special Price 368,85 $US
Availability: In stock
SKU
808NW-LD

808nm narrow spectral linewidth laser diode provides highly stable and accurate infrared laser radiation with high beam intensity and high output power. This powerful 808nm MM infrared laser diode fulfills stable wavelength with narrow linewidth while operating temperature and drive current change.

Featured characteristics:
Compact structure, C-mount package
Fulfilling various range CW output power
Narrow linewidth of 0.2nm, stable wavelength
Good accuracy ± 0.5nm, high stability <8pm / ° C
Widely applicable in the industry


Standard technical parameters of 808nm narrow linewidth laser diode:

Item Symbol NL LD-808-2000 NL LD-808-2500 NL LD-808-5500
CW Output Power P 2000mW 2500mW 5500mW
Peak Wavelength λp 808±0.5nm 808±1.5nm 808±1.5nm
Spectrum FWHM Δλ 0.2nm 0.5nm 0.6nm
Threshold Current Ith ≤0.5A ≤0.6A ≤1.3A
Operating Current Iop ≤2.5A ≤3.1A ≤7.4A
Slope Efficiency η ≥0.5W/A ≥1.0W/A ≥0.9W/A
Operating Voltage Vop ≤2.0V ≤1.7V ≤1.7V
Horizontal Beam Divergence θ∥ ≤8 deg ≤8 deg ≤8 deg
Vertical Beam Divergence θ⊥ ≤1.0 deg ≤37 deg ≤37 deg
Wavelength Temperature Coefficient dλ/dT 0.07nm/℃ 0.07nm/℃ 0.07nm/℃
Locking range, power 1.0 0.2-2.5 0.5-5.5
Polarization   TE TE TE
Storage Temperature Tstg -40~80℃ -40~85℃ -10~80℃
Operating Temperature Tc -20~30℃ 0~50℃ -20~30℃
Package   C-mount C-mount C-mount


C-mount package 808nm narrow linewidth multimode laser diode draw:

C-mount package 808nm narrow linewidth multimode laser diode

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